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Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy

Publication Type

Conference Paper

Date Published

04/1993

Authors

Chan, James S., T.C. Fu, Nathan W. Cheung, Jennifer T. Ross, Nathan Newman, Michael D. Rubin

Abstract

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al₂O₃ samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al₂O₃ films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.

Journal

Materials Research Society

Volume

300

Year of Publication

1993