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Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films

Publication Type

Journal Article

Authors

Zhang, J., M. Rutkowski, L.W. Martin, T. Conry, Ramamoorthy Ramesh, J.F. Ihlefeld, A. Melville, D.G. Schlom, L.J. Brillson

DOI

10.1116/1.3130152

Abstract

The authors report on the depth-resolved cathodoluminescence spectroscopy studies of the surface, bulk, and interface-localized electronic states in the band gap of epitaxial BiFeO3 thin films. The BiFeO3 films show a near band edge emission at 2.7 eV and defect emissions at energies varying from 2.0 to 2.5 eV. The overall results clearly suggest that the electronic structure, especially the defect states and their spatial distributions, of BiFeO3 films are strongly dependent on the growth conditions and method, stoichiometry, and strain, so that understanding and controlling them are crucial to optimize BiFeO3 film properties. © 2009 American Vacuum Society.

Journal

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volume

Year of Publication

2009

ISSN

10711023

Notes

cited By 15

Research Areas

Ramesh Lab