<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jennifer T. Ross</style></author><author><style face="normal" font="default" size="100%">Michael D. Rubin</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High Quality GaN Grown by Reactive Sputtering</style></title><secondary-title><style face="normal" font="default" size="100%">Mater. Lett</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1991</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://eetd.lbl.gov/sites/all/files/publications/31726.pdf</style></url></related-urls></urls><volume><style face="normal" font="default" size="100%">12</style></volume><pages><style face="normal" font="default" size="100%">215</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Gallium nitride films were grown by reactive rf magnetron sputtering on sapphire substrates. Crystalline (1120) GaN films were obtained on (0112) sapphire at substratestemperatures between 640-680 OC. High N2 partial pressures are required to crystalize the GaN films. Nitrogen incorporation and crystal quality of GaN films are examined as a function of substrate temperature and nitrogen partial pressure. Band gaps of 3.4 eV, and photoluminescence peaks as narrow as 11 meV are reported for sputtered GaN films.&lt;/p&gt;</style></abstract><call-num><style face="normal" font="default" size="100%">LBL-31726</style></call-num><custom1><style face="normal" font="default" size="100%">&lt;p&gt;Windows and Daylighting Group&lt;/p&gt;</style></custom1><custom2><style face="normal" font="default" size="100%">LBL-31726</style></custom2></record></records></xml>