<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Nathan Newman</style></author><author><style face="normal" font="default" size="100%">T.C. Fu</style></author><author><style face="normal" font="default" size="100%">Z. Liu</style></author><author><style face="normal" font="default" size="100%">Zuzanna Liliental-Weber</style></author><author><style face="normal" font="default" size="100%">Michael D. Rubin</style></author><author><style face="normal" font="default" size="100%">J.S. Chan</style></author><author><style face="normal" font="default" size="100%">E. Jones</style></author><author><style face="normal" font="default" size="100%">Jennifer T. Ross</style></author><author><style face="normal" font="default" size="100%">Ian M. Tidswell</style></author><author><style face="normal" font="default" size="100%">Kin Man Yu</style></author><author><style face="normal" font="default" size="100%">Nathan W. Cheung</style></author><author><style face="normal" font="default" size="100%">Eicke R. Weber</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy</style></title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://eetd.lbl.gov/sites/all/files/publications/37296.pdf</style></url></related-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. . In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable groivth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.&lt;/p&gt;</style></abstract><call-num><style face="normal" font="default" size="100%">LBL-37296</style></call-num><custom1><style face="normal" font="default" size="100%">&lt;p&gt;Windows and Daylighting Group&lt;/p&gt;</style></custom1><custom2><style face="normal" font="default" size="100%">LBL-37296</style></custom2></record></records></xml>