Characterization of Y-Ba-Cu-O Thin-Films and Yttria-Stabilized Zirconia Intermediate Layers on Metal-Alloys Grown by Pulsed Laser Deposition

TitleCharacterization of Y-Ba-Cu-O Thin-Films and Yttria-Stabilized Zirconia Intermediate Layers on Metal-Alloys Grown by Pulsed Laser Deposition
Publication TypeJournal Article
Year of Publication1991
AuthorsReade, R. P., Xianglei Mao, and Richard E. Russo
Secondary TitleApplied Physics Letters
Volume59
Pagination739-741
Publication Languageeng
Accession Number17
Keywordsalloy, alloys, applications, buffer layers, characterization, circulation, deposited, deposition, deposition process, film, films, growth, intermediate, k, laser, laser deposition, layer, layers, metallic, metallic alloys, no, oriented, oxide, p, polycrystalline, process, pulsed laser, pulsed laser deposition, pulsed-laser, pulsed-laser-deposition, si, substrate, substrates, superconducting, tape, thin, thin film, thin films, thin-film, thin-films, time, y-ba-cu-o, yba2cu3o7-delta, ybacuo, ybacuo thin films, ysz, yttria stabilized zirconia, yttria-stabilized zirconia, yttria-stabilized-zirconia, zirconia, zirconium
Abstract

The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled-orientation yttria-stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ-coated substrates are primarily c-axis oriented and superconducting as deposited. The best YBaCuO films grow on (001) oriented YSZ intermediate layers and have T(c) (R = 0) = 86.0 K and J(c) approximately 3 X 10(3) A/cm 2 at 77 K
Notes

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LBNL Report NumberLBNL-30855
Citation Key14444