Selfsputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

TitleSelfsputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions
Publication TypeJournal Article
Year of Publication2008
AuthorsAnders, Andre
Secondary TitleApplied Physics Letters
Date Published08/2004
Place PublishedBoulder, CO
Publication Languageeng
Call NumberLBNL-171E
Abstract

Selfsputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ~ Q1/2, whereas the rate normalized to the average power decreases ~ Q-1/2, with Q being the mean ion charge state number.

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LBNL Report NumberLBNL-171E
Citation Key1791
AttachmentSize
PDF187.4 KB