In the standard process for sputtering of YBCO, the substrate is located off the axis of the target. High pressures are used to avoid and slow bombardment of the growing film by high-energy oxygen atoms. Using a particle shield and dc bias, we have deposited high quality YBCO films on axis at significantly reduced pressures. Typically these films have better and more repeatable electrical properties than off-axis films, and deposition rates are 2 to 3 times faster. Even more important is the return to a geometry that is inherently scalable to large-area deposition.