Pulsed plasmas offer the use of much higher power (during each pulse) compared to continuously operatedsplasmas, and additional new parameters appear such as pulse duty cycle. Pulsed processing may helpsmeeting the demands of increasingly sophisticated materials processes, including thin film deposition,splasma etching, plasma cleaning of surfaces, and plasma immersion ion implantation. The high kineticsenergy of ions allows processes to occur far from thermodynamic equilibrium. Pulsed plasmas are drivensby external pulsed power sources, and one has to consider the power source and the plasma as a coupledssystem. The dynamic plasma impedance is a key quantity from an electrical engineering point of view.sFrom a plasma physics point of view, one needs to consider the dynamics of plasma species, their densitysand energy distribution, ionization and recombination reactions, and, most importantly, the development ofstransient sheaths. Dimensionless scaling parameters are a useful tool putting the variety of plasmasparameters in relation to characteristic quantities. This is illustrated by several examples of pulsedsprocesses relevant to thin film deposition. The emerging technology of pulsed sputtering is discussed insdetail including the possibility to achieve the mode of self-sustained self-sputtering during each pulse.